Development of a Tool-Set for Remote and Partial Reconfiguration of FPGAs [p. Moraes, D. Mesquita, J. Palma, L. Möller, and N. CalazansThis work describes the implementation of digital reconfigurable techniques utilizing business FPGA units. The primary aim is to current a set of instruments for remote and partial reconfiguration developed for the Virtex FPGA household. Even though the tools are targeted to a selected gadget, their building ideas could easily be adapted to other FPGA families, if they’ve an internal structure enabling partial reconfiguration.
Accordingly, the width D11 of the recessed portion 230 a between the source/drain regions 250 in the X1 path is bigger than the width D12 of the protruding portion 230 b within the X1 direction. Therefore, the gate electrode 230 between the source/drain regions 250 has an inner taiwan dram nanya technology 10b gate construction. Accordingly, a region during which an electric field is focused is not generated, a junction leakage current is small, and thus refresh traits are good.
In this work, similar to , we employ Markov sources primarily based on finite state machines with transitions managed by further inputs. Hence, transition possibilities of the FSM are decided by the 1-probability on a corresponding input. Compiler Support for Reducing Leakage Energy Consumption [p. Zhang, M. Kandemir, N. Vijaykrishnan, M. Irwin, and V. DeCurrent tendencies indicate that leakage energy consumption might be an essential concern in upcoming course of technologies.
For this objective, the whole construction is “turned around” and the primary carrier substrate layer 2 which is now located at the top is etched away by wet etching. In addition, the principle service oxide layer 1 is removed by chemical-mechanical planarization CMP or via an additional etching step. Ions for forming drain regions of the selection MOSFET are implanted into the now exposed surfaces of the semiconductor substrate columns 3 a, 3 b, 3 c. The complete structure is subsequently coated with polysilicon 18. Preferably a titanium nitride layer 19 is applied over the latter and is itself coated with a metal layer 20 of tungsten. The titanium nitride intermediate layer 19 serves to offer higher adhesion of the metal layer 20 on the polysilicon 18.
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